Structural, Magnetic and Electronic Properties of Dilute MnScN(001) Grown by RF Nitrogen Plasma Molecular Beam Epitaxy

نویسندگان

  • Costel Constantin
  • Kangkang Wang
  • Abhijit Chinchore
  • Han-Jong Chia
  • John Markert
  • Arthur R. Smith
چکیده

The structural, magnetic, and electronic properties of dilute Mn-doped scandium nitride thin films grown by radio frequency N-plasma molecular beam epitaxy are explored. The results indicate a small magnetization extending up to as high as 350K. There is a slight dependence on the manganese concentration, with the lower Mn concentration showing a larger saturation magnetization.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Magnetic and Electronic Properties of Fe0.1Sc0.9N /ScN(001)/MgO(001) Grown by Radio- Frequency Molecular Beam Epitaxy

Fe0.1Sc0.9N with a thickness of ~ 380 nm was grown on top of a ScN(001) buffer layer of ~ 50 nm, grown on MgO(001) substrate by radio-frequency N-plasma molecular beam epitaxy (rf-MBE). The buffer layer was grown at TS ~ 800 o C, whereas the Fe0.1Sc0.9N(001) film was grown at TS ~ 420 °C. In-situ reflection high-energy electron diffraction measurements show that the Fe0.1Sc0.9N film growth star...

متن کامل

Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN„001..

Scandium nitride ~001! oriented layers have been grown on magnesium oxide ~001! substrates by molecular beam epitaxy using a rf-plasma source and a scandium effusion cell. The Sc/N flux ratio is found to be critical in determining the structural, optical, and electronic properties of the grown epitaxial layers. A distinct transition occurs at the point where the Sc/N flux ratio equals 1, which ...

متن کامل

Photoluminescence study of nitrogen-doped p-type MgxZn12xO nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy

Temperature-dependent photoluminescence of nitrogen-doped p-type MgxZn1-xO nanocrystalline thin film grown on c-plane sapphire substrate by rf plasma-assisted molecular beam epitaxy is investigated. P-type behavior is confirmed by both Hall effect and Seebeck measurements. Structural defect-related bound excitonic emission peak is distinguished at around *50 meV lower than peak energy of the ne...

متن کامل

Nanoscale Phase Separation in Fe,O,(lll) Films on Sapphire(OOO1) and Phase Stability of Fe,O,(OOl) Films on MgO(001) Grown by Oxygen-Plasma-Assisted Molecular Beam Expitaxy

Nanoscale phase separation in Fe304(l 11) films on sapphire(0001) and phase stability of Fe304(001) films on MgO(001) grown by oxygen-plasma-assisted molecular beam epitaxy We report a phase instability in oxygen-plasma-assisted molecular beam epitaxy of Fe304 films on sapphire (0001) substrates. Under a wide range of growth conditions, Fe304 (111) films phase separate, on a nanometer length sc...

متن کامل

Molecular beam epitaxial growth of atomically smooth scandium nitride films

High quality scandium nitride films have been grown on magnesium oxide ~001! substrates by molecular beam epitaxy using a rf plasma source for nitrogen. Both reflection high energy electron diffraction and x-ray diffraction confirm that these films have ~001!-orientation. Atomic force microscopy reveals a surface morphology consisting of large plateaus and pyramids. The plateaus are found to be...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011